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| SMD Type Power Transistor 2SD1898 Transistors Features High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC IC (Pulse) * Collector power dissipation Junction temperature Storage temperature *1. Pw=20ms. *2. 40X40X0.7mm Ceramic board. PC PC *2 Tj Tstg 1 Rating 120 80 5 1 2 0.5 2 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50iA IC=1mA IE=50iA VCB=100V VEB=4V VCE=3V,IC=0.5A 82 0.15 100 20 Testconditons Min 120 80 5 1 1 390 0.4 V MHz pF Typ Max Unit V V V iA iA VCE(sat) IC=500mA,IB=20mA fT Cob VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE P 82 180 DF Q 120 270 R 180 390 www.kexin.com.cn 1 |
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